Investigation on V2O5 Thin Films for Field Effect Transistor Applications

Suresh Babu, S. K. and Jackuline Moni, D. and Gracia, D. and Adigo, Amsalu Gosu and Chelladurai, Samson Jerold Samuel (2021) Investigation on V2O5 Thin Films for Field Effect Transistor Applications. Advances in Materials Science and Engineering, 2021. pp. 1-7. ISSN 1687-8434

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Abstract

V2O5 thin films are analyzed for the substitution of SiO2 to reduce the leakage current in devices when SiO2 becomes ultrathin in submicron technology. Vanadium pentoxide (V2O5) has a high-k dielectric constant of 25 and can be replaced as a gate oxide in the field-effect transistor. V2O5 is deposited using pulsed laser deposition (PLD) in the oxygen (O2) environment at room temperature and characterized. The films surface morphology has been examined by scanning electron microscopy. The capacitance, dielectric constant, and dielectric loss are analyzed for fabricated metal oxide semiconductor (MOS) structure using Solartron SI-1260 impedance analyzer. The transfer characteristic of the fabricated device is analyzed using National Instruments NI-PXI 4110. The ION/IOFF ratio of 106 and threshold voltage (VTH) of 0.6 V is obtained.

Item Type: Article
Subjects: GO for STM > Engineering
Depositing User: Unnamed user with email support@goforstm.com
Date Deposited: 06 Jan 2023 12:02
Last Modified: 23 Aug 2023 04:26
URI: http://archive.article4submit.com/id/eprint/6

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